View BLF571-15_9016633.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product pro?le 1.1 general description a 20 w ldmos rf transistor for broadcast applications and industrial applications in the hf and vhf band. 1.2 features n typical cw performance at frequency of 225 mhz, a supply voltage of 50 v and an i dq of 50 ma: u average output power = 20 w u power gain = 27.5 db u ef?ciency = 70 % n easy power control n integrated esd protection n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (10 mhz to 500 mhz) n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications n industrial, scienti?c and medical applications n broadcast transmitter applications blf571 hf / vhf power ldmos transistor rev. 02 24 february 2009 product data sheet table 1. production test performance mode of operation f v ds p l g p h d (mhz) (v) (w) (db) (%) cw 225 50 20 27.5 70 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 2 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simpli?ed outline graphic symbol 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version blf571 - ?anged ldmost ceramic package; 2 mounting holes; 2 leads sot467c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage - 0.5 +11 v i d drain current - 3.6 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 c; p l = 20 w 2.9 k/w
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 3 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.25 ma 110 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 25 ma 1.25 1.7 2.25 v v gsq gate-source quiescent voltage v ds = 50 v; i d = 50 ma 1.25 1.75 2.25 v i dss drain leakage current v gs =0v; v ds =50v - - 1.4 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 3.0 3.6 - a i gss gate leakage current v gs = 11 v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 1.25 a - 1.8 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 833 ma - 1.34 - w c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 0.18 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 22.9 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 9.64 - pf table 7. rf characteristics mode of operation: cw; f = 225 mhz; rf performance at v ds = 50 v; i dq = 50 ma; t case =25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 20 w 25.5 27.5 29.5 db rl in input return loss p l = 20 w 10 13 - db h d drain ef?ciency p l = 20 w 67 70 - %
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 4 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 6.1 ruggedness in class-ab operation the blf571 is capable of withstanding a load mismatch corresponding to vswr = 13 : 1 through all phases under the following conditions: v ds = 50 v; i dq = 50 ma; p l = 20 w; f = 225 mhz. 7. application information 7.1 impedance information v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; capacitance value without internal matching v ds (v) 050 40 20 30 10 001aaj172 20 30 10 40 50 c oss (pf) 0 table 8. typical impedance simulated z s and z l test circuit impedances. f z s z l mhz w w 225 9.7 + j31.5 31.7 + j29.3 fig 2. de?nition of transistor impedance 001aaf059 drain z l z s gate
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 5 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 7.2 reliability ttf (0.1 % failure fraction). (1) t j = 100 c (2) t j = 110 c (3) t j = 120 c (4) t j = 130 c (5) t j = 140 c (6) t j = 150 c (7) t j = 160 c (8) t j = 170 c (9) t j = 180 c (10) t j = 190 c (11) t j = 200 c fig 3. blf571 electromigration 001aaj173 10 2 10 10 4 10 3 10 5 years 1 i ds(dc) (a) 0 1.6 1.2 0.8 0.4 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11)
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 6 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 8. test information 8.1 rf performance the following ?gures are measured in a class-ab production test circuit. 8.1.1 1-tone cw v ds = 50 v; i dq = 50 ma; f = 225 mhz. v ds = 50 v; f = 225 mhz. (1) i dq = 20 ma (2) i dq = 40 ma (3) i dq = 50 ma (4) i dq = 60 ma (5) i dq = 80 ma fig 4. power gain and drain ef?ciency as function of load power; typical values fig 5. power gain as a function of load power; typical values 001aaj174 p l (w) 030 20 10 25 15 5 26 24 28 30 g p (db) 22 40 20 60 80 0 h d (%) g p h d 001aaj175 p l (w) 030 20 10 25 15 5 26 24 28 30 g p (db) 22 (4) (3) (2) (1) (5)
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 7 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 8.1.2 2-tone cw v ds = 50 v; i dq = 50 ma; f = 225 mhz. (1) p l(1db) = 43.3 dbm (21.4 w) (2) p l(3db) = 44 dbm (25.1 w) fig 6. load power as function of input power; typical values p i (dbm) 13 21 19 15 17 001aaj176 44 46 42 48 50 p l (dbm) 40 (1) (2) ideal p l p l v ds = 50 v; i dq = 50 ma; f 1 = 224.95 mhz; f 2 = 225.05 mhz. v ds = 50 v; f 1 = 224.95 mhz; f 2 = 225.05 mhz. (1) i dq = 20 ma (2) i dq = 40 ma (3) i dq = 50 ma (4) i dq = 60 ma (5) i dq = 80 ma fig 7. power gain and drain ef?ciency as function of peak envelope load power; typical values fig 8. third order intermodulation distortion as a function of peak envelope load power; typical values 001aaj177 p l(pep) (w) 030 20 10 26 24 28 30 g p (db) h d (%) 22 40 20 60 80 0 g p h d p l(pep) (w) 030 20 10 001aaj178 - 40 - 20 0 imd3 (dbc) - 60 (2) (3) (4) (5) (1)
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 8 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 8.2 test circuit [1] american technical ceramics type 100b or capacitor of same quality. [2] printed-circuit board (pcb): rogers 5880; e r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m m. table 9. list of components all capacitors should be soldered vertically. for test circuit, see figure 9 and figure 10 . component description value remarks c1, c3, c4, c5, c14 multilayer ceramic chip capacitor 100 pf [1] c2 multilayer ceramic chip capacitor 39 pf [1] c6 multilayer ceramic chip capacitor 68 pf [1] c7, c9 multilayer ceramic chip capacitor 1 nf [1] c8 multilayer ceramic chip capacitor 4.7 m f tdk c4532x7r1e475mt020u or equivalent c10 multilayer ceramic chip capacitor 8.2 pf [1] c11 electrolytic capacitor 220 m f c12 multilayer ceramic chip capacitor 33 pf [1] c13 multilayer ceramic chip capacitor 15 pf [1] l1 1 turn enamelled copper wire d = 5.5 mm; d=1mm; lengt h=1mm l2 2 turns enamelled copper wire d = 3.5 mm; d=1mm; lengt h=3mm l3 5 turns enamelled copper wire d=6mm; d=1mm; lengt h=5mm l4 3.3 turns enamelled copper wire d=3mm; d=1mm; lengt h=4mm l5 3 turns enamelled copper wire d=3mm; d=1mm; lengt h=3mm l6 stripline - [2] (l w) 16.5 mm 2.4 mm l7, l8, l10, l11, l17, l19, l20 stripline - [2] (l w) 3.0 mm 5.0 mm l9 stripline - [2] (l w) 43.0 mm 2.4 mm l12, l15 stripline - [2] (l w) 3.5 mm 2.4 mm l13, l14 stripline - [2] (l w) 8.0 mm 8.0 mm l16 stripline - [2] (l w) 3.0 mm 5.9 mm l18 stripline - [2] (l w) 27.0 mm 2.4 mm l21 stripline - [2] (l w) 28.5 mm 2.4 mm r1 metal ?lm resistor 1000 w ; 0.6 w
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 9 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor fig 9. class-ab common-source production test circuit c1 input 50 w c14 output 50 w c8 c7 v gg r1 l13 l11 l12 c6 c5 l10 l2 l17 l16 l4 l20 l19 l5 l8 l7 l1 l9 l18 l21 l6 l14 l3 c11 c9 v dd 001aaj179 l15 c4 c3 c2 c12 c13 c10 fig 10. component layout for class-ab production test circuit 001aaj180 c11 c9 c7 c8 c10 c12 c6 c5 c4 c2 c3 c1 c13 c14 l3 r1 l4 l2 l1 l5 9 mm nxp blf571 225 mhz input pcb rev1 nxp blf571 225 mhz output pcb rev2 5.5 mm 6.5 mm 5 mm 3 mm
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 10 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 9. package outline fig 11. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-06 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 11 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 10. abbreviations 11. revision history table 10. abbreviations acronym description cw continuous wave edge enhanced data rates for gsm evolution gsm global system for mobile communications hf high frequency ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency ttf time to failure vhf very high frequency vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes blf571_2 20090224 product data sheet - blf571_1 modi?cations: ? data sheet status updated from preliminary to product blf571_1 20081211 preliminary data sheet - -
blf571_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 12 of 13 nxp semiconductors blf571 hf / vhf power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors blf571 hf / vhf power ldmos transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 24 february 2009 document identifier: blf571_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation. . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1.1 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1.2 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.2 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

▲Up To Search▲

Price & Availability of BLF571-15

	To Download BLF571-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .